(Hong Kong)
Product Summary
The 2SD1664T100R is a medium power transistor (32V, 1A).
Parametrics
2SD1664T100R absolute maximum ratings: (1)collector-base voltage: 40 V;(2)collector-emitter voltage: 32 V;(3)emitter-base voltage: 5 V;(4)collector current: 1 or 2 A;(5)junction temperature: 150℃;(6)storage temperature: -55 to +150℃;(7)Collector power dissipation: 0.5 or 2 W.
Features
2SD1664T100R features: (1)Low VCE(sat). VCE(sat) = 0.15 V(Typ.) (IC / IB= 0.5 A / 50 mA); (2)High VCEO, VCEO=80V; (3)Complements the 2SB1132. And the structure of this device is Epitaxial planar type and NPN silicon transistor.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 2SD1664T100R |
ROHM Semiconductor |
Transistors Bipolar (BJT) NPN 32V 1A |
Data Sheet |
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Quantity | ||||||||||||||
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2SD1000 |
Other |
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Data Sheet |
Negotiable |
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2SD1001 |
Other |
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Data Sheet |
Negotiable |
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2SD1005 |
Other |
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Data Sheet |
Negotiable |
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2SD1005-BV |
Other |
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Data Sheet |
Negotiable |
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2SD1006 |
Other |
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Data Sheet |
Negotiable |
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2SD1007 |
Other |
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Data Sheet |
Negotiable |
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