BTS443P

N channel vertical power FET, charge pump, current controlled input

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Price:: US $0.20~1.00 / piece [Get Latest Price]

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	US $0.20~1.00

PartNumber:: BTS443P

Brand:: Infineon Technologies AG - Infineon | Pack: TO | D/C: 09+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2011-03-11

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Part Number:BTS443P
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Product Summary

The BTS443P is an N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions. It is widely applied in the following aspects: power switch with current sense diagnostic feedback for 12V and 24 V DC grounded loads; all types of resistive, capacitive and inductive loads (no PWM with inductive loads); replaces electromechanical relays, fuses and discrete circuits.

Parametrics

Absolute maximum ratings:(1)Supply voltage (overvoltage protection see page 4), Vbb: 36 V; (2)Supply voltage for full short circuit protection (see also diagram on page 9), Tj=-40...150 °C, Vbb: 24 V; (3)Load dump protection VLoadDump = UA + Vs, UA = 13.5 V RI= 2 Ω, RL= 2.7 Ω, td= 200 ms, IN= low or high, VLoad dump: 60 V; (4)Load current (Short-circuit current, see page 4), IL: self-limited A; (5)Operating temperature range Storage temperature range, Tj: -40 to +150°C; (6)Operating temperature range Storage temperature range, Tstg: -55 to+150°C; (7)Power dissipation (DC) TC ≤ 25°C, Ptot: 42 W; (8)Inductive load switch-off energy dissipation, single pulse U=12V, I=10A, L=3mH Tj=150 °C: EAS: 0.15 J; (9)Electrostatic discharge capability (ESD)(Human Body Model), acc. ESD assn. std. S5.1-1993; R=1.5kΩ; C=100pF, VESD: 4.0 kV; (10)Current through input pin (DC), IIN: +15, -100mA; (11)Current through current sense pin (DC), IIS: +15, -100mA.

Features

Features: (1)Short circuit protection; (2)Current limitation; (3)Overload protection; (4)Thermal shutdown; (5)Overvoltage protection (including load dump); (6)Loss of ground protection; (7)Loss of Vbb protection (with external diode for charged inductive loads); (8)Very low standby current; (9)Fast demagnetisation of inductive loads; (10)Electrostatic discharge (ESD) protection; (11)Optimized static electromagnetic compatibility (EMC).